Method for manufacturing semiconductor device
作者： Furuta Hiroshi , Yoshida Motohiko
DOI:
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摘要: PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device wherein side etching is suppressed and patterning accuracy increased. SOLUTION: First, ZnO layer 3 formed on glass substrate 2, plurality of square masks 5 are in an area removing the so that they may have width smaller than disappearing due to resulted from 3. A mask 4 having larger pattern still left. The thin long used as mask, anisotropic which speed widthwise direction higher thickness adopted form specified be left, then removed peeled. COPYRIGHT: (C)2006,JPO&NCIPI
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