Method of manufacturing semi-conductor memory device using two etching patterns
作者： Yoshihiro Takaishi
DOI:
关键词: Optoelectronics 、 Materials science 、 Group (periodic table) 、 Semiconductor 、 Layer (electronics) 、 Electronic engineering 、 Etching (microfabrication) 、 Semiconductor device 、 Electrical conductor
摘要: In a method of manufacturing semiconductor device, laminate film is formed on an insulating which substrate. The composed conductive layer and the layer. A first etching process carried out to using mask form group patterns for gates second patterns. Then, polysilicon pad films deposited after process. Subsequently, third gates.
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