Method of manufacturing insulated electrodes in a semiconductor device and semiconductor device manufactured by such a method

摘要: Method of manufacturing a semiconductor device and manufactured by such method. A method whereby surface body 1 is covered with an electrically insulating layer 8 at least two electrical conductors 20, 23 are provided on the next to one another mutually separated interposed dielectric 21. The conductor 20 formed from first conductive deposited layer. upper flank 25 facing other Then second 22 over entire which exhibits step corresponding conductor. Subsequently, mask 24 defines conductor, after through etching. According invention, so aligned relative that edge towards situated above etched isotropically, etching continued long has been entirely removed said in partly owing underetching below mask. invention may advantageously be used for manufacture charge coupled electrodes do not overlap another.