High Thermoelectric Action in Vacuum Deposited Indium Alloyed Chalcogenide Thin Films: In x Se 100- x

摘要: Chalcogenide glasses own high degree of disorder which is a significant parameter to improve the performance thermoelectric materials. Here, we study electrical and properties vacuum deposited In x Se100- ( ${x} = \textsf {6}$ , 12, 18, 24) chalcogenide thin films in temperature range from 300 450 K. The values dc conductivity have been determined were found increase $\textsf {0.029} \times {10}^{-\textsf {10}} \Omega ^{-\textsf {1}}\,\cdot \, \text{m}^{-\textsf {1}}$ ) $173.546\times 10^{-\textsf {24}$ ). Thin film samples for 24 shown Seebeck coefficient. obtained results coefficient may lead value power factor. Looking into results, it expected that ${x}= figure merit be explored as new