Detection of pollutant gases using electrostatic sprayed indium oxide and tin-doped indium oxide
作者： Camelia Matei Ghimbeu , Martine Lumbreras , Maryam Siadat , Joop Schoonman
DOI: 10.1016/J.MATCHEMPHYS.2008.10.072
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摘要: Abstract The aim of this paper is to present the gas sensing performance In2O3 and Sn-doped films prepared by a novel technique, i.e., Electrostatic Spray Deposition technique. morphology microstructure studies reveal that are porous comprising grains in nanometer range crystallizing cubic structure. prove be sensitive low H2S concentrations (1–10 ppm) at operating temperature (200 °C). Undoped very high sensitivity H2S, compared with doped films, negligible response NO2 SO2. Sn dopant introduced causes great decrease response, and, on contrary, slight increase SO2 response.
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