作者: Dae-Sung Park , A. Krupski , A. M. Sanchez , Chel-Jong Choi , Min-Su Yi
DOI: 10.1063/1.4870533
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摘要: The influence of growth temperature on the synthesis BexZn1−xO alloy films, grown highly-mismatched Al2O3(0001) substrates, was studied by synchrotron x-ray scattering, high-resolution transmission electron microscopy and photoluminescence measurements. A single-phase with a Be concentration x = 0.25, obtained at temperature, Tg = 400 °C, verified microscopy. It found that high-temperature growth, Tg≥600 °C, caused phase separation, resulting in random distribution intermixed phases. inhomogeneity structural fluctuations observed films high temperatures are attributed to variation composition mosaic via atomic displacement strain relaxation.