Magnetic memory element utilizing spin transfer switching
作者： Cheng-Tyng Yen , Wei-Chuan Chen , Ding-Yeong Wang
DOI:
关键词:
摘要: A magnetic memory element utilizing spin transfer switching includes a pinned layer, tunneling barrier layer and free structure. The is disposed on the layer. structure composite first an insert second has polarization factor saturation magnetization. smaller than magnetization Magnetization vectors of are arranged as parallel-coupled.
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