Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
作者： Fumihiro Matsukura , Hideo Ohno , Ryutaro Sasaki , Hiromasa Takahashi , Hiromasa Takahashi
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摘要: We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and thermal stability factor (E/kBT, where E, kB, T are energy potential, Boltzmann constant, temperature, respectively) MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7–2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. show that Jc0 E/kBT can be determined by analyzing average as function of coercivity using Slonczewski's model taking into account fluctuation. find high antiferromagnetic coupling between two CoFeB layers SyF layer results reduced without reducing E/kBT.
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