Magnetic memory element, method of driving same, and nonvolatile storage device
作者： Yasushi Ogimoto
DOI:
关键词: Electrical engineering 、 Spin valve 、 Materials science 、 Optoelectronics 、 Layer (electronics) 、 Memory cell 、 Pulse (physics) 、 Polarity (mutual inductance) 、 Ferrimagnetism 、 Compensation (engineering) 、 Network layer
摘要: In order to obtain a memory cell of size 4 F 2 realize cross-point type memory, magnetic element is used having spin valve structure including free layer 5, nonmagnetic 4, and 3. The or the includes an N-type ferrimagnetic material, compensation point material lower than temperature reached by when certain write pulse applied control combination magnetizations layer, higher another applied. These pulses can have same polarity.
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