Memory device using spin hall effect and methods of manufacturing and operating the memory device
作者： Sung-Chul Lee , Kwang-Seok Kim , Young-man Jang , Kee-Won Kim , Ung-hwan Pi
DOI:
关键词: Electrical engineering 、 Sense amplifier 、 Engineering 、 Spin Hall effect 、 Word (computer architecture) 、 Bubble memory 、 Tunnel magnetoresistance 、 Line (text file) 、 Current (fluid) 、 Semiconductor memory
摘要: A memory device using a spin hall effect, and methods of manufacturing operating the device, include applying first operational current to bit line such that is applied magnetic tunnel junction (MTJ) cell coupled due material in line, wherein electrically connected word via MTJ cell, intersects line.
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