Segmented word line architecture for cross point magnetic random access memory

摘要: An MRAM comprises a plurality of magnetic memory cells, local word lines, each the lines being operatively coupled to at least one cell for assisting in writing logical state corresponding thereto, global connected substantially isolated from write circuits and bit cells selectively or more cells. Each is configurable as current source and/or sink supplying returning, respectively, portion The are configured distribute across so that stray field interaction between selected half-selected unselected reduced.