作者: Takashi Sakoh
DOI:
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摘要: Comparing with, for example, a semiconductor device having the configuration in which logic circuit and DRAM cell are consolidated, an analog capacity element is installed without substantially increasing number of steps provided. An to be DNA e 11 has structure lower electrode 5 , side-wall insulation film 9 bit line formed using same materials patterns as those gate 4 dielectric 10 line, respectively.