Semiconductor device having MIS transistors and capacitor
作者： Takashi Yoshitomi
DOI:
关键词:
摘要: The capacitor dielectric film (35) and the poly silicon layer (36) are formed on silicide (32) of upper electrode LE capacitor. Further, after Ti TiN (37) has been by spattering, is allowed to react upon (36), form TiSi 2 (38) high melting point (36). After that, before forming barrier (40) wiring (42), substrate (10) cleaned as pre-processing applying a voltage (10). In this cleaning process, since protected film, it possible prevent from being damaged during process.
lens.org 参考文章(7)
Naoto Matsuo, Semiconductor memory device with a capacitor having a protection layer ,(1994)
Frank R. Bryant, Loi N. Nguyen, Tsiu C. Chan, Method of forming a landing pad structure in an integrated circuit ,(1995)
Gurtej S. Sandhu, Pierre C. Fazan, Method of forming a Ta2O5 dielectric layer, method of forming a capacitor having a Ta2O5 dielectric layer, and capacitor construction ,(1998)
Gurtej S. Sandhu, Pierre C. Fazan, Method of forming a Ta2 O5 dielectric layer, method of forming a capacitor having a Ta2 O5 dielectric layer, and capacitor construction ,(1996)
Ho-kyu Kang, Capacitor of semiconductor memory device and manufacturing method thereof ,(1996)
James L. Paterson, Howard L. Tigelaar, Metal-to-polysilicon capacitor and method for making the same ,(1988)
Nii Hideaki, Ono Mizuki, Method of manufacturing a semiconductor device ,(1999)