Methods for use in formation of titanium nitride interconnects

摘要: A method for use in the fabrication of semiconductor devices includes forming a titanium nitride film and depositing silicon hard mask over film. The is used to pattern interconnect from also as contact etch stop area. In interconnect, dry etched stopping selectively on exposing portions exposed are resulting interconnect. using stop, an insulating layer deposited form then converted metal silicide Interconnects formed described.