Method for the formation of tin barrier layer with preferential (111) crystallographic orientation
作者： Jaim Nulman , Kenny King-Tai Ngan
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摘要: A process is described for forming, over a silicon surface, titanium nitride barrier layer having surface of (111) crystallographic orientation. The comprises: depositing first surface; sputtering the layer; second sputtered and then annealing structure in presence nitrogen-bearing gas, absence an oxygen-bearing to form desired orientation sufficient thickness provide protection underlying against spiking aluminum. When aluminum subsequently formed oriented will assume same orientation, resulting enhanced resistance electromigration.
google.de 参考文章(30)
Donald K. Stemple, Reactive sputter cleaning of semiconductor wafer ,(1985)
Masato Toshima, Vacuum chamber slit valve ,(1987)
Thomas E. Tang, Che-Chia Wei, Thomas C. Holloway, Roger A. Haken, Process to increase tin thickness ,(1986)
Jiinjen A. Sue, Harden H. Troue, Titanium nitride and zirconium nitride coating compositions, coated articles and methods of manufacture ,(1986)
Daniel L. Brors, Low resistivity tungsten silicon composite film ,(1984)
Thomas E. Tang, Che-Chia Wei, Thomas C. Holloway, David A. Bell, Roger A. Haken, Process for patterning local interconnects ,(1986)
Kenji Hinode, Kiichiro Mukai, Yoshio Homma, Natsuki Yokoyama, Titanium nitride film in contact hole with large aspect ratio ,(1988)
Daniel L. Brors, Process for depositing a low resistivity tungsten silicon composite film on a substrate ,(1984)
Hideaki Arima, Natsuo Ajika, Multi-layered interconnection structure for a semiconductor device ,(1990)
Bernd Garben, Hans J. Bauer, Method and apparatus for making ohmic and/or Schottky barrier contacts to semiconductor substrates ,(1983)