Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer

摘要: An improved method is provided for fabricating a metal silicide upon semiconductor substrate. The advantageously places film of nitride the layer. layer and are sputter deposited within same chamber without removing substrate from vacuum so as to prevent oxygen or moisture contaminating causing oxides form thereon. Furthermore, reactively in nitrogen/argon ambient allow precise amounts nitrogen be across uneven surface topography directly adjacent underlying Excess purposefully consumes controlled depth bond sites limit amount silicidation silicon polysilicon into thereby substantially eliminating minimizing shorting problems.