Single anneal step process for forming titanium silicide on semiconductor wafer

摘要: An improved process is disclosed for forming a conductive layer of titanium silicide on silicon semiconductor wafer using single annealing step which comprises the steps over in vacuum deposition chamber substantial absence oxygen-bearing gases; transferring coated to sealed without substantially exposing newly formed and then titanium-coated nitrogen-bearing atmosphere at first temperature from about 500° C. 695° C., gases, form nitride inhibits migration underlying surface, react all overlying oxide (SiO 2 ) regions nitride, raising more stable phase risk reaction between unreacted thereon.