Method of forming a contact structure and a container capacitor structure
作者： Fernando Gonzalez , Roger R. Lee , D. Mark Durcan , Trung T. Doan
DOI:
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摘要: Method for forming at least a portion of top electrode container capacitor and contact plug in one deposition are described. In embodiment, the is formed interior to bottom capacitor. another to, exterior below The method with same particularly well-suited high-density memory array formation.
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