Semiconductor device having a multilayered wiring structure
作者： Masanori Kinugasa , Munenobu Kida , Shuichi Shoji , Kohichi Takayama
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摘要: At least one slit having a predetermined shape is formed around contact region of lower wiring layer on substrate, and an insulating portion integrally with embedded in this slit. This the has hole located at position corresponding to region. Since as rectangular projecting projects into downwardly from rigid layer, positional errors caused by thermal expansion annealing upper can be suppressed, abnormal geometry such projection prevented. In addition, semiconductor device free interwiring short-circuiting excellent flatness obtained.
lens.org 参考文章(13)
Albert Bergemont, Richard Ferrant, Method for contact between two conductive or semi-conductive layers deposited on a substrate ,(1988)
Seiichi Hirata, Toshiharu Sakurai, Semiconductor device of resin-seal type ,(1984)
Kikuji Sato, Takahiro Okabe, Atsushi Saiki, Seiki Harada, Multilayer wiring structure of integrated circuit and method of producing the same ,(1972)
Tatsuro Toya, Satoru Ito, Yuji Hara, Resin molded type semiconductor device having a conductor film ,(1995)
S. Simon Wong, David C. Thomas, Planar tungsten interconnect with implanted silicon ,(1988)
William T. Cochran, Jenn L. Yeh, Agustin M. Garcia, Graham W. Hills, Semiconductor devices having multi-level metal interconnects ,(1988)
Motohiro Enkaku, Toshiya Kato, Semiconductor integrated circuit device of multilayer interconnection structure ,(1989)
Rokutaro Ogawa, Tohru Hosomizu, Kenichi Ohno, Multilevel masterslice LSI with second metal level programming ,(1982)
William M. Morgan, Anthony R. Cowburn, Paul Bowman, Frank T. Moth, Dennis S. Mansbridge, Semiconductor integrated display device with overlapping electrodes ,(1989)
Shono Takeshi, LAYER CONNECTION OF SEMICONDUCTOR DEVICE ,(1986)