Multilevel masterslice LSI with second metal level programming
作者： Rokutaro Ogawa , Tohru Hosomizu , Kenichi Ohno
DOI:
关键词: Insulation layer 、 Metal 、 Semiconductor device 、 Engineering 、 Semiconductor 、 Electrical element 、 Electrical engineering 、 Line (electrical engineering)
摘要: A semiconductor device comprising a bulk in which plurality of basic circuit elements are formed, first interconnecting lines being formed on insulation layer said bulk, second both and lines, cell connected with each other by wherein the line for connecting two has separated parts, one end parts is to elements, provided pair through-holes cell, contacts parts.
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