Method for manufacturing sloped sidewall silicon dioxide structure by adopting photoetching and dry etching

摘要: The invention discloses a method for manufacturing sloped sidewall silicon dioxide structure by adopting photoetching and dry etching. comprises the following steps of: (1) cleaning substrate; (2) depositing thin film on (3) coating photoresist substrate with deposited photoetching; (4) thinning photoresist; (5) hardening at high temperature; (6) carrying out DRIE (Deep Reactive Ion Etching) etching photoetched substrate. A appearance can be obtained only once, is simple quick has strong universality.