Interconnect structures containing blocked segments to minimize stress migration and electromigration damage

摘要: Interconnect or metallization structures for integrated circuits on semiconductor chips contain blocked conductor segments to limit atomic transport from one segment another thus minimizing stress migration and electromigration damage. Since the prevent between two neighboring segments, total amount of atoms vacancies available hillock void growth in a can be controlled by length segment. The are made high electrical conductance metals, such as aluminum, copper gold based alloys, separated very short melting temperature refractory metal alloy. Because their temperatures, metals alloys suppress transport. interconnect fabricated conventional lithographic deposition techniques.