Photoluminescence and electrical properties of N-implanted ZnO films
作者： X.D. Zhang , C.L. Liu , Z. Wang , Y.Y. Lü , L.J. Yin
DOI: 10.1016/J.NIMB.2006.10.074
关键词:
摘要: Abstract ZnO thin films deposited on glass substrate were implanted by 140 keV N ions at a dose of 2 × 10 16 /cm 2 and then annealed in vacuum for 1 h different temperatures. Hall effect photoluminescence (PL) measurements performed to investigate the electrical optical properties films. PL reveal that N ion implantation can deteriorate photoluminescence. The subsequent annealing leads increase luminescence. indicate N-implanted film 600 °C is still n-type carrier concentration as high 6.67 × 10 22 cm −3 . Lattice mismatch doping levels are responsible difficulty fabrication p-type implantation.
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