P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn 3 N 2 Films
作者： Yu-Ping Jin , Bin Zhang , Jian-Zhong Wang , Li-Qun Shi
DOI: 10.1088/0256-307X/33/5/058101
关键词: Analytical chemistry 、 Materials science 、 Spectroscopy 、 Annealing (metallurgy) 、 Thermal oxidation 、 Doping 、 Photoluminescence 、 Electrical resistivity and conductivity 、 X-ray photoelectron spectroscopy 、 Acceptor
摘要: P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The characterized x-ray diffraction, non-Rutherford backscattering (non-RBS) spectroscopy, photoelectron and photoluminescence spectrum. results show that the start to transform at 400°C total nitrogen content decreases with increasing annealing temperature. p-type achieved 500°C a low resistivity 6.33Ωcm high hole concentration +8.82 × 1017 cm−3, as well level carbon contamination, indicating substitutional (NO) is an effective acceptor in ZnO:N film. spectra clear UV emissions also indicate presence oxygen vacancy (VO) defects doping mechanism briefly discussed.
harvard.edu
iphy.ac.cn参考文章(23)
Xinran Nie, Bin Zhang, Jianzhong Wang, Liqun Shi, Zengfeng Di, Qinglei Guo, Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films Materials Letters. ,vol. 161, pp. 355- 359 ,(2015) , 10.1016/J.MATLET.2015.08.143
J LU, p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations Materials Letters. ,vol. 57, pp. 3311- 3314 ,(2003) , 10.1016/S0167-577X(03)00054-5
X.D. Zhang, C.L. Liu, Z. Wang, Y.Y. Lü, L.J. Yin, Photoluminescence and electrical properties of N-implanted ZnO films Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 254, pp. 83- 86 ,(2007) , 10.1016/J.NIMB.2006.10.074
XL Wu, GG Siu, CL Fu, HC Ong, None, Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films Applied Physics Letters. ,vol. 78, pp. 2285- 2287 ,(2001) , 10.1063/1.1361288
Kun Wang, Zhibo Ding, Tianxiang Chen, Di Chen, Shude Yao, Zhuxi Fu, Effects of 120 keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 266, pp. 2962- 2965 ,(2008) , 10.1016/J.NIMB.2008.03.148
S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, Z. K. Tang, ZnO p-n junction light-emitting diodes fabricated on sapphire substrates Applied Physics Letters. ,vol. 88, pp. 031911- ,(2006) , 10.1063/1.2166686
YinMao Dong, DongYan Tang, ChenSha Li, The impact of solvent and modifier on ZnO thin-film transistors fabricated by sol-gel process Science China Technological Sciences. ,vol. 57, pp. 2153- 2160 ,(2014) , 10.1007/S11431-014-5684-0
CH Park, SB Zhang, Su-Huai Wei, None, Origin of p -type doping difficulty in ZnO: The impurity perspective Physical Review B. ,vol. 66, pp. 073202- ,(2002) , 10.1103/PHYSREVB.66.073202
Peng Wang, Nuofu Chen, Zhigang Yin, Fei Yang, Changtao Peng, Ruixuan Dai, Yiming Bai, As-doped p-type ZnO films by sputtering and thermal diffusion process Journal of Applied Physics. ,vol. 100, pp. 043704- ,(2006) , 10.1063/1.2245192
Chao Wang, Zhenguo Ji, Kun Liu, Yin Xiang, Zhizhen Ye, p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering Journal of Crystal Growth. ,vol. 259, pp. 279- 281 ,(2003) , 10.1016/J.JCRYSGRO.2003.07.002