Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride
作者： A.E. Rakhshani
DOI: 10.1016/J.JALLCOM.2016.10.187
关键词:
摘要: Abstract Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety techniques with the exception thermal oxidation ZnON that is simple less explored method. We converted sputter-deposited films to p-ZnO at relatively low temperatures (400–500 °C) as compared other reports. Chemical bonding states nitrogen in were examined by XPS analysis mechanism doping was discussed. Films characterized XRD, SEM, photocurrent spectroscopy, photoluminescence (PL) measurement. composed from nano-size crystallites (100) preferential orientation. A shallow acceptor level 70–90 meV binding energy 1.72-eV deep measured identified. PL quenching had activation 34 meV. Schottky barrier (SB) diodes, two different types n-ZnO, fabricated on their parameters data. The SB both diodes high rectification factors (104-105) good device parameters. conductance diode based n-ZnO showed energies 0.08–0.12 eV, 0.16–0.20 eV, 0.40–0.50 eV. nano-rods exhibited strong electroluminescence visible region which defect-related transition 2.21 eV 2.66 eV obtained. In conclusion, quality can be prepared films.
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