Transparent p/n diode device from a single zinc nitride sputtering target
作者： V. Kambilafka , A. Kostopoulos , M. Androulidaki , K. Tsagaraki , M. Modreanu
DOI: 10.1016/J.TSF.2011.06.072
关键词:
摘要: Abstract Zinc oxide (ZnO) thin films showing bipolar conductivity were fabricated by sputtering of zinc nitride target in plasma containing mixture Ar–O 2 gasses. Sputtering pure Ar produced conductive and opaque (ZnN) while upon introduction oxygen up to 30% into the highly transparent single phase polycrystalline n-type ZnO have been grown. ZnN more than p-type films. Hall-effect photoluminescence measurements revealed presence vacancies nitrogen which are acting as acceptor dopants ZnO. A heterostructure was a deposition run consisting n-ZnN p-ZnO exhibited rectifying behavior with 2–2.5 V turn-on voltage. Improvements on formed p/n well potential using fabrication Zn-based homo- hetero-junctions discussed.
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