Methods of forming semiconductor constructions
作者： David J. Keller
DOI:
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摘要: Some embodiments include a semiconductor construction having stack containing alternating levels of control gate material and intervening dielectric material. A channel panel extends through the along first direction. The divides into section on side second panel. Memory cell stacks are between memory shaped as containers open ends pointing toward panel, charge-storage within containers. methods forming constructions.
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