Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
作者： Yao-Sheng Lee , Raghuveer S. Makala , Johann Alsmeier
DOI:
关键词:
摘要: A monolithic three dimensional NAND string includes a vertical semiconductor channel and plurality of control gate electrodes in different device levels. The also blocking dielectric layer, charge storage region tunnel dielectric. first electrode is separated from second by an air gap located between the major surfaces and/or silicide nanoparticles embedded
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