Vertical nand and method of making thereof using sequential stack etching and landing pad
作者： Yung-Tin Chen , Henry Chien , Xiying Costa , Johann Alsmeier , Chi-Ming Wang
DOI:
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摘要: A vertical NAND string device includes a semiconductor channel, where at least one end portion of the channel extends substantially perpendicular to major surface substrate, or electrically conductive landing pad embedded in tunnel dielectric located adjacent charge storage region dielectric, blocking and plurality control gate electrodes extending parallel substrate.
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