An effective gate resistance model for CMOS RF and noise modeling
作者： Xiaodong Jin , Jia-Jiunn Ou , Chih-Hung Chen , Weidong Liu , M.J. Deen
关键词:
摘要: A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and distributed electrode is proposed for accurately predicting RF performance of CMOS devices. The accuracy validated with 2D simulations experimental data. In addition, on device noise behavior has been studied measured result shows that an accurate essential modeling.
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