作者: Ning Ge , Jose Jehrome Rando , Leong Yap Chia , Pin Chin Lee
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摘要: A semiconductor device and method of forming the same is described. In an example, a polysilicon layer deposited on substrate having at least one ring. The doped using as mask to form regions in substrate. dielectric over etched expose portions layer. metal layer, exposed are such that portion each ring removed.