Process for manufacturing an electronic device including MOS transistors with salicided junctions and non-salicided resistors
作者： Bruno Vajana , Matteo Patelmo , Libera Giovanna Dalla , Nadia Galbiati
DOI:
关键词: Resistor 、 Silicon 、 Doping 、 Silicide 、 Electrical engineering 、 Materials science 、 Gate oxide 、 Substrate (electronics) 、 Transistor 、 Optoelectronics 、 Layer (electronics)
摘要: A manufacturing process that includes, in succession: depositing a gate oxide layer on silicon substrate defining transistor area and resistor area; multicrystal the layer; removing selective portions of to form region over protective completely covering forming source drain regions area, laterally region; silicide direct contact with regions, delimitation ring; implanting ionic dopants inside defined by ring, lightly doped which has no directly it.
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