Eprom cell with modified floating gate
作者： Leong Yap Chia , Ning Ge , Jose Jehrome Rando
DOI:
关键词:
摘要: An electronically programmable read-only memory (EPROM) cell includes a semiconductor substrate having source and drain regions; floating gate, adjacent to the regions separated from by first dielectric layer, gate including: polysilicon layer formed over layer; metal electrically connected where surface area of is less than 1000 µm2; control comprising second capacitively coupled through material disposed therebetween.
lens.org 参考文章(15)
Reynaldo V. Villavelez, Paul I. Mikulan, Memory cell having closed curve structure ,(2011)
Purakh Raj Verma, Guo Wei Zhang, High voltage device ,(2012)
Crispino Abella, Alfio Mazza, Ivan Frapreau, Radiation hardened MOS structure ,(2004)
Ching-Sung Yang, Shih-Jye Shen, Ching-Hsiang Hsu, Single poly embedded eprom ,(2002)
Jeffrey W. Honeycutt, Lightly doped drain MOS transistor ,(2002)
Trudy Benjamin, Modified-layer eprom cell ,(2005)
Bruno Vajana, Matteo Patelmo, Libera Giovanna Dalla, Nadia Galbiati, Process for manufacturing an electronic device including MOS transistors with salicided junctions and non-salicided resistors ,(1998)
Thomas M. Luich, David Byrd, Electronically erasable memory cell using CMOS technology ,(2001)
George K. Parish, John G. Edelen, Kristi M. Rowe, Micro-fluid ejecting device having embedded memory in communication with an external controller ,(2007)
Ning Ge, Paul I. Mikulan, Bee Ling Peh, Circuit that selects eproms individually and in parallel ,(2011)