Method of making diffused layer resistors for semiconductor devices
作者： Yutaka Okamoto
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摘要: A low-concentration diffused region is created on a of semiconductor substrate reserved for the creation diffused-region resistor, and after mask film has been surface substrate, doping to cover part resistor. Subsequently, high-concentration layer resistor except covered by using an impurity technique. Then, silicide creating from means etching technique as mask, removed. Later on, selectively layer. In addition, this method can be applied also in CMOS process.
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