作者: Wai-kin Li , Deok-kee Kim , Haining S. Yang
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摘要: An electrical fuse is formed on a semiconductor substrate and first dielectric layer over the fuse. At least one opening by lithographic methods reactive ion etch in down to top surface of or shallow trench isolation. A second deposited non-conformal deposition. Thickness sidewalls at increases with height so that cavity encapsulated opening. The provides enhanced thermal isolation since superior than material.