Synchronous semiconductor memory device having multi-bank scheme

作者: Chul-Soo Kim

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摘要: A synchronous semiconductor memory device having multiple banks allows one bank to begin executing a data operation (e.g., reading from cell) while another is writing cell). The includes write path through which an input signal transmitted the cell of operation, and read output input/output pin. paths are each connected via common line. synchronized, such that once first begins either or second may other type after predetermined time delay has elapsed, still its operation.