C-axis oriented Ba-ferrite thin film with perpendicular anisotropy deposited on Si/sub 3/N/sub 4/ substrate
作者： N.N. Shams , M. Matsumoto , A. Morisako
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摘要: Si/sub 3/N/sub 4/, a new substrate as well thermally oxidized SiO/sub 2//Si wafer were used to prepare hexagonal Barium ferrite (BaM) thin films by facing target sputtering system. At temperature (Ts) of 600/spl deg/C, the intensities BaM [00l] planes in X-ray diffraction diagrams much stronger case 4/ than that substrate. The value /spl Delta//spl theta//sub 50/ was found about 2.28/spl deg/ for 25-nm thickness deposited on 4/. Then, Ts reduced 525/spl deg/C. Perpendicular coercivity (Hc/sub perp/) and squareness ratio (S/sub higher even at maximum Hc/sub perp/=3.25 kOe S/sub perp/=0.7 film 35 nm. It not only reduces during in-situ deposition but also increases perpendicular anisotropy film.
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