Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS study
作者： J. Lee , J. Metson , P.J. Evans , U. Pal , D. Bhattacharyya
DOI: 10.1016/J.APSUSC.2009.09.064
关键词:
摘要: Implantation and diffusion behavior of Sb, Ti N in ZnO single crystal sputter deposited thin films were studied through secondary ion mass spectrometric studies on ion-implanted thermally annealed samples. Sb was implanted co-implanted into crystals polycrystalline Si substrates at room temperature. The samples then 800 °C. Depth profiles implant distributions before after annealing examined by Secondary Ion Mass Spectrometry (SIMS). As expected, range is sensitive to the dopants; dopant distribution broadened as elements migrate deeper film thermal annealing. While not significant, tends diffuse sample during For crystal, induced causes more redistribution lighter than Ti. In general, dopants easily compared due presence grain boundaries latter.
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