An effect of annealing on In implanted ZnO
作者： I. Sakaguchi , D. Park , Y. Takata , S. Hishita , N. Ohashi
DOI: 10.1016/S0168-583X(03)00706-7
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摘要: Abstract The behavior of In implants, 170 keV, 1 × 1016 ions/cm2, in ZnO after annealing was investigated the temperature range 750–850 °C. depth profiles reveal anomalous due to plateau region profiles. diffusion coefficients were estimated from profiles, and dependence described as D [ cm 2 / s ]=1.1 exp (−259±17 kJ mol ]/RT) . feature resulted complex defects formed by radiation damages. leads an intense emission at around 525 nm photoluminescence spectrum. This is related oxygen vacancy.
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K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. Gnade, Mechanisms behind green photoluminescence in ZnO phosphor powders Journal of Applied Physics. ,vol. 79, pp. 7983- 7990 ,(1996) , 10.1063/1.362349
J. Wong-Leung, J. S. Williams, M. Petravić, The influence of cavities and point defects on boron diffusion in silicon Applied Physics Letters. ,vol. 72, pp. 2418- 2420 ,(1998) , 10.1063/1.121372
Anchuan Wang, Jiyan Dai, Jizhi Cheng, Michael P. Chudzik, Tobin J. Marks, Robert P. H. Chang, Carl R. Kannewurf, Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition Applied Physics Letters. ,vol. 73, pp. 327- 329 ,(1998) , 10.1063/1.121823
C.W. White, L.A. Boatner, P.S. Sklad, C.J. McHargue, J. Rankin, G.C. Farlow, M.J. Aziz, Ion implantation and annealing of crystalline oxides and ceramic materials Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 32, pp. 11- 22 ,(1988) , 10.1016/0168-583X(88)90172-3
Hiromichi Ohta, Won-Seon Seo, Kunihito Koumoto, Thermoelectric Properties of Homologous Compounds in the ZnO–In2O3 System Journal of the American Ceramic Society. ,vol. 79, pp. 2193- 2196 ,(1996) , 10.1111/J.1151-2916.1996.TB08958.X