Effects of Annealing on the Structural and Photoluminescent Properties of Ag-Doped ZnO Nanowires Prepared by Ion Implantation
作者： Yong Zhao , Xian Chen , Liguang Fang , Lianfang Yang , Huihui Li
DOI: 10.1088/1009-0630/15/8/19
关键词:
摘要: ZnO nanowires deposited on Si substrates were prepared by thermal evaporation of a mixture and carbon powder. Ag ions with an energy 63 keV dose 5 × 1015 ions/cm2 implanted into the as-prepared nanowires. After ion implantation, Ag-implanted annealed in air at different temperatures from 600°C to 1000°C. Effects implantation annealing structural photoluminescent (PL) properties investigated transmission electron microscopy (TEM), selected area dispersive X-ray spectroscopy (SAEDX), diffraction (XRD), fluorescence spectrophotometry. TEM, HR-TEM, SAEDX analyses demonstrated that efficient doping was achieved subsequent process. XRD patterns revealed hexagonal wurtzite structure maintained after implantation. Photoluminescent emissions decreased significantly but could be recovered annealing. The mechanism influence PL intensity assessed.
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