Manganese-doped ZnO nanobelts for spintronics
作者： C. Ronning , P. X. Gao , Y. Ding , Z. L. Wang , D. Schwen
DOI: 10.1063/1.1645319
关键词: Zinc 、 Transmission electron microscopy 、 Inorganic chemistry 、 Annealing (metallurgy) 、 Luminescence 、 Ion implantation 、 Materials science 、 Photoluminescence 、 Spintronics 、 Doping
摘要: Zinc oxide (ZnO) nanobelts synthesized by thermal evaporation have been ion implanted with 30 keV Mn+ ions. Both transmission electron microscopy and photoluminescence investigations show highly defective material directly after the implantation process. Upon annealing to 800 °C, Mn remains in ZnO matrix recovers both structure luminescence. The produced high-quality ZnO:Mn are potentially useful for spintronics.
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sci-hub.se 参考文章(16)
S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, Cheryl Evans, A. J. Nelson, A. V. Hamza, Ion-beam-produced structural defects in ZnO Physical Review B. ,vol. 67, pp. 094115- ,(2003) , 10.1103/PHYSREVB.67.094115
T. Monteiro, C. Boemare, M. J. Soares, E. Rita, E. Alves, Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals Journal of Applied Physics. ,vol. 93, pp. 8995- 9000 ,(2003) , 10.1063/1.1573341
K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. Gnade, Mechanisms behind green photoluminescence in ZnO phosphor powders Journal of Applied Physics. ,vol. 79, pp. 7983- 7990 ,(1996) , 10.1063/1.362349
Seung Chul Lyu, Ye Zhang, Hyun Ruh, Hwack-Joo Lee, Hyun-Wook Shim, Eun-Kyung Suh, Cheol Jin Lee, Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires Chemical Physics Letters. ,vol. 363, pp. 134- 138 ,(2002) , 10.1016/S0009-2614(02)01145-4
S. O. Kucheyev, C. Jagadish, J. S. Williams, P. N. K. Deenapanray, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, Ken-ichi Ogata, Implant isolation of ZnO Journal of Applied Physics. ,vol. 93, pp. 2972- 2976 ,(2003) , 10.1063/1.1542939
J Kossut, W Dobrowolski, Diluted magnetic semiconductors Journal of Applied Physics. ,vol. 64, pp. R29- R64 ,(1988) , 10.1063/1.341700
E. Sonder, R. A. Zuhr, R. E. Valiga, Annealing of damage and stability of implanted ions in ZnO crystals Journal of Applied Physics. ,vol. 64, pp. 1140- 1144 ,(1988) , 10.1063/1.341875
Tomasz Dietl, o H Ohno, a F Matsukura, J Cibert, e D Ferrand, Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors Science. ,vol. 287, pp. 1019- 1022 ,(2000) , 10.1126/SCIENCE.287.5455.1019
S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen, Enhanced dynamic annealing in Ga ¿ ion-implanted GaN nanowires Applied Physics Letters. ,vol. 82, pp. 451- 453 ,(2003) , 10.1063/1.1536250
Kenji Ueda, Hitoshi Tabata, Tomoji Kawai, Magnetic and electric properties of transition-metal-doped ZnO films Applied Physics Letters. ,vol. 79, pp. 988- 990 ,(2001) , 10.1063/1.1384478