作者: P.P. Sahay , A. Bhattacharjee , S. Tewari
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摘要: Zinc oxide thin films were prepared by chemical spray pyrolysis technique using Zn(CH 3 COO) 2 as precursor solution . Structural analyses of the performed with XRD confirmed that all zinc having polycrystalline nature (101).as preferred plane orientation .A.C. conductivity measured in frequency range 1Hz to 0.1MHz and temperature 300K 433K. The experimental studies on a.c. ZnO reveal correlated barrier hopping (CBH) model is most suitable explain conduction mechanism films. Based this model, polaron binding energy (W m ), height Coulomb (W) characteristic relaxation time ( τ 0 ) have been calculated. values W increase film thickness decreases, whereas decrease decreasing thickness.