The future prospect of nonvolatile memory
作者： Kinam Kim , Jung Hyuk Choi , Jungdal Choi , Hong-Sik Jeong
DOI: 10.1109/VTSA.2005.1497091
关键词:
摘要: As mobile appliances are prevailing in our daily lives, the nonvolatile memory suitable for applications becomes indispensable elements and it is anticipated that usage much increased future due to diversified applications. Therefore very appropriate important look into where technologies now, what challenges are, should go. In this study, two major devices of i.e., NAND flash NOR reviewed then newly emerging PRAM (phase change memory), FRAM (ferroelectric memory) discussed.
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