Aqueous hydrofluoric acid vapor processing of semiconductor wafers

摘要: Disclosed are methods and apparatuses for improved etching of semiconductor wafers the like using hydrofluoric acid (HF) water mixtures or solutions which generate equilibrium vapor HF serve as a homogenous etchant gas. The etchants do not employ carrier gas will make vapors nonhomogeneous reduce rates. preferably generated from liquid source is provided within contained reaction chamber holds wafer. wafer oriented with surface being processed directed downward. advantageously positioned above in close proximity to vapor. rotated at rotational speed range 20-1000 revolutions per minute provide uniform dispersion homogeneous across facilitate circulation transfer into onto surface. can be bath immediately below toroidal basin adjacent processes high good uniformity superior particle count performance.