作者: J. Wong
DOI: 10.1016/0022-3093(76)90109-5
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摘要: Abstract Room temperature infrared transmission spectra in the range 4000-250 cm −1 of binary phosphosilicate glass (PSG) films deposited by reacting argon- or nitrogen-diluted PH 3 SiH 4 O 2 mixtures on heated silicon substrates at 300–400° C have been obtained across whole composition range. In all as-deposited films, an absorption ≈1300 characteristics P=O vibration was found to persist, together with a couple broad absorptions regions 1200-900 and 500 . Using differential technique feature higher frequency region has resolved into two well-defined bands ≈1100 970 A detailed analysis shows that intensity variation band conforms well, least 50 mol% P O 5 , simple structural model yields analytic distribution POSi linkages as function assuming chemical mixing vapor-deposited SiO system. Furthermore, system may be written (P=O) order emphasize similarity its coordination scheme B studied earlier. The nature these CVD also elucidated thermal water treatments.