Optical and electrical properties of undoped and oxygen-doped a-GeC:H films prepared by magnetron sputtering

作者: N. Saito , I. Nakaaki , H. Iwata , T. Yamaguchi

DOI: 10.1016/J.TSF.2006.09.031

关键词:

摘要: Abstract Hydrogenated amorphous germanium carbon (a-GeC:H) alloy films have been prepared by magnetron sputtering of in methane–neon gas mixtures. The dependence structural, optical and electrical properties on the methane partial pressure (Rm) has investigated. With increasing Rm, concentration hydrogen bonded to carbon, band gap Eo, activation energy Ed dark conductivity σd increase, while Urbach Eu decrease. On basis these results, we made an attempt add oxygen a-GeC:H introducing during deposition. It is found that shows a maximum minimum as function pressure, Eo tend increase slightly.

参考文章(20)
E. Ech-chamikh, E.L. Ameziane, A. Bennouna, M. Azizan, T.A. Nguyen Tan, T. Lopez-Rios, Structural and optical properties of r.f.-sputtered SixC1 − x:O films Thin Solid Films. ,vol. 259, pp. 18- 24 ,(1995) , 10.1016/0040-6090(94)06426-1
J. Vilcarromero, F. C. Marques, F. L. Freire, Optoelectronic and structural properties of a-Ge1−xCx:H prepared by rf reactive cosputtering Journal of Applied Physics. ,vol. 84, pp. 174- 180 ,(1998) , 10.1063/1.368093
L.-N. He, D.-M. Wang, S. Hasegawa, A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy Journal of Non-crystalline Solids. ,vol. 261, pp. 67- 71 ,(2000) , 10.1016/S0022-3093(99)00616-X
B Schröder, A Annen, T Drüsedau, H Freistedt, P Deák, H Oechsner, None, Influence of oxygen incorporation on the properties of magnetron sputtered hydrogenated amorphous germanium films Applied Physics Letters. ,vol. 62, pp. 1961- 1963 ,(1993) , 10.1063/1.109504
M. Serenyi, J. Betko, Á. Nemcsics, N. Q. Khanh, M. Morvic, Fabrication of a-SiGe structure by rf sputtering for solar cell purposes Physica Status Solidi (c). pp. 857- 861 ,(2003) , 10.1002/PSSC.200306325
N. Saito, I. Nakaaki, T. Yamaguchi, S. Yoshioka, S. Nakamura, Influence of deposition conditions on the properties of a-GeC:H and a-Ge:H films prepared by r.f. magnetron sputtering Thin Solid Films. ,vol. 269, pp. 69- 74 ,(1995) , 10.1016/0040-6090(95)06671-3
W.E Spear, R.J Loveland, A.Al-Sharbaty, The temperature dependence f photoconductivity in a-Si Journal of Non-Crystalline Solids. ,vol. 15, pp. 410- 422 ,(1974) , 10.1016/0022-3093(74)90147-1
G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, Y. Goldstein, Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon Physical Review Letters. ,vol. 47, pp. 1480- 1483 ,(1981) , 10.1103/PHYSREVLETT.47.1480