High-quality MBE growth of AlχGa1-χ As-based THz quantum cascade lasers

摘要: High-quality GaAs-based quantum cascade laser (QCL) structures for the terahertz (THz) emission have been grown by solid source molecular-beam epitaxy. Ex-situ high-resolution x-ray diffraction shows that layer thickness and its control is most critical growth aspect lasing potential of structure can be determined accuracy layers. For our samples, tolerance working emitting approximately 100 μm was to minimally above 1% a 15 active region which composed 54.6 nm cells. Increasing interface roughness adversely affects threshold power.