Fabrication of ultrafine silicon layers on sapphire
作者： A. A. Shemukhin , Yu. V. Balakshin , V. S. Chernysh , A. S. Patrakeev , S. A. Golubkov
DOI: 10.1134/S1063785012100112
关键词:
摘要: The effect of energy, dosage, and temperature irradiation silicon-on-sapphire structures by Si+ ions, as well parameters recrystallization annealing, on crystallinity silicon film is shown. Implantation conditions annealing are determined.
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