Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

摘要: The use of the process solid-phase recrystallization reduces to a great extent number defects in silicon layer. An amorphous layer was formed by implantation ions. crystalline quality SOS structures has been assessed method high-resolution double-crystal X-ray diffraction. Silicon layers with thickness d = 1000-2500 A and high have obtained after 150-keV ions subsequent high-temperature annealing.