Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy
作者： A. E. Blagov , A. L. Vasiliev , A. S. Golubeva , I. A. Ivanov , O. A. Kondratev
DOI: 10.1134/S1063774514030043
关键词: Electron diffraction 、 Substrate (electronics) 、 Diffraction 、 X-ray reflectivity 、 X-ray crystallography 、 Silicon on sapphire 、 Optics 、 Electron backscatter diffraction 、 Reflection high-energy electron diffraction 、 Materials science
摘要: Heteroepitaxial silicon-on-sapphire (SOS) structures have been studied by high-resolution X-ray diffraction, reflectivity, electron microscopy, and diffraction. These methods yielded a large amount of complementary data on the defect structure both sapphire substrate silicon film, including integral local (at atomic-resolution level) information about substrate, sapphire-silicon interface.
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